MMBD914LT3HTMA1
DIODE GEN PURP 100V 250MA SOT23Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies MMBD914LT3HTMA1 is a general-purpose diode designed for fast switching applications. This surface mount component, housed in a PG-SOT23 package (TO-236-3, SC-59, SOT-23-3), offers a maximum DC reverse voltage of 100V and an average rectified current of 250mA. Key performance characteristics include a forward voltage of 1.25V at 150mA and a low reverse leakage of 100nA at 75V. The diode exhibits a reverse recovery time of 4ns, classifying it as a fast recovery device. Its capacitance at 0V and 1MHz is 2pF. Operating at junction temperatures up to 150°C, this diode finds application in various electronic circuits, including power supplies, signal processing, and general switching functions across industries like consumer electronics and telecommunications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 250mA |
| Supplier Device Package | PG-SOT23 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 75 V |
Request a Quote
Clients Also Buy
IDDD04G65C6XTMA1
DIODE SIL CARB 650V 13A HDSOP-10
BAS16E6393HTSA1
DIODE GEN PURP 80V 250MA SOT23
IDH10SG60CXKSA2
DIODE SIL CARB 600V 10A TO220-1
