IRD3CH9DB6
DIODE GEN PURP 1.2KV 10A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IRD3CH9DB6 is a general-purpose diode designed for demanding applications. This high-voltage component features a 1200 V reverse voltage rating and a 10 A average rectified current capability. Its fast recovery characteristic, with a typical reverse recovery time of 154 ns, ensures efficient operation in high-frequency switching circuits. The forward voltage drop is rated at 2.7 V maximum at 10 A. Operating across a junction temperature range of -40°C to 150°C, this device exhibits a low reverse leakage current of 200 nA at its maximum reverse voltage. Supplied as a bare die in bulk packaging, the IRD3CH9DB6 is suitable for surface mount configurations. Its robust specifications make it a reliable choice for power supply units, industrial motor drives, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 154 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 nA @ 1200 V |
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