IRD3CH5DB6
DIODE GEN PURP 1.2KV 5A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IRD3CH5DB6 is a general-purpose diode designed for high-voltage applications. This surface mount component features a 1200 V reverse voltage rating and a 5 A average rectified forward current. With a forward voltage drop of 2.7 V at 5 A and a reverse leakage current of only 100 nA at its maximum reverse voltage, the IRD3CH5DB6 offers efficient rectification. Its fast recovery time of 96 ns contributes to reduced switching losses in power conversion circuits. The operating junction temperature range is -40°C to 150°C, making it suitable for demanding environments. This die-level component is typically utilized in power supply units, electric vehicle charging systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 96 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 nA @ 1200 V |
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