IRD3CH53DB6
DIODE GEN PURP 1.2KV 100A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IRD3CH53DB6 is a high-performance general-purpose diode designed for demanding applications. This die-level component offers a 1200V reverse voltage rating and a substantial 100A average rectified current capability. It features a fast recovery time of 270ns, suitable for applications requiring efficient switching. The forward voltage drop is characterized at 2.7V at 100A. The leakage current at its maximum reverse voltage is a low 20 µA @ 1200 V. Operating across a junction temperature range of -40°C to 150°C, this diode is ideal for power conversion, industrial motor control, and electric vehicle charging systems. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 270 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 100 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
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