IRD3CH101DB6
DIODE GEN PURP 1.2KV 200A DIEManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IRD3CH101DB6 is a general-purpose diode featuring a 1200V reverse voltage rating and a 200A average rectified current capability. This diode utilizes standard technology and offers a fast recovery time of 360ns, suitable for applications requiring efficient switching. The forward voltage drop is specified at 2.7V maximum at 200A. It exhibits a low reverse leakage current of 100 µA at its maximum reverse voltage. The component is supplied as a die for surface mounting, with an operating junction temperature range of -40°C to 175°C. This diode is commonly found in power electronics applications, including industrial power supplies and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 360 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 2.7 V @ 200 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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