IDY10S120XKSA1
DIODE SIC 1.2KV 5A TO247HC-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDY10S120XKSA1, is a Silicon Carbide Schottky diode designed for high-performance applications. This component features a 1200V reverse voltage rating and a 5A average rectified forward current (Io). Its forward voltage drop (Vf) is a maximum of 1.8V at 10A. The diode exhibits a low reverse leakage current of 120 µA at 1200V and a capacitance of 250pF at 1V and 1MHz. Notably, it offers zero reverse recovery time, enabling faster switching speeds. The IDY10S120XKSA1 is housed in a PG-TO247HC-3 package suitable for through-hole mounting. It operates across a junction temperature range of -55°C to 175°C. This technology is utilized in industries such as power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO247HC-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 120 µA @ 1200 V |
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