IDW40G65C5FKSA1
DIODE SIL CARB 650V 40A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDW40G65C5FKSA1 is a 650V, 40A Silicon Carbide Schottky diode. This component features a forward voltage (Vf) of 1.7V at 40A and a reverse leakage current of 1.4mA at 650V. Designed with no recovery time above 500mA (Io), it utilizes SiC technology for enhanced performance and efficiency. The diode has a capacitance of 1140pF at 1V and 1MHz. Operating across a junction temperature range of -55°C to 175°C, it is housed in a PG-TO247-3-1 package for through-hole mounting. This diode is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1140pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | PG-TO247-3-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 40 A |
| Current - Reverse Leakage @ Vr | 1.4 mA @ 650 V |
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