IDW30G65C5FKSA1
DIODE SIL CARB 650V 30A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDW30G65C5FKSA1 is a 650V 30A Silicon Carbide (SiC) Schottky diode. This component features a low forward voltage of 1.7V at 30A and exhibits no reverse recovery time above 500mA (Io). With a junction operating temperature range of -55°C to 175°C, it is designed for demanding applications. The diode has a capacitance of 860pF at 1V and 1MHz, and a reverse leakage of 1.1mA at 650V. Supplied in a PG-TO247-3-1 package, the IDW30G65C5FKSA1 is suitable for through-hole mounting. This SiC Schottky diode is utilized in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 860pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | PG-TO247-3-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 1.1 mA @ 650 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
