IDW24G65C5BXKSA2
DIODE SIL CARB 650V 12A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Series IDW24G65C5BXKSA2 is a 650V Silicon Carbide Schottky diode. This through-hole component features a PG-TO247-3 package, offering a 12A average rectified current (Io). With a maximum forward voltage (Vf) of 1.7V at 12A, it exhibits an exceptionally low reverse leakage current of 190 µA at 650V. The device is engineered with SiC technology, delivering a zero reverse recovery time for currents exceeding 500mA (Io). Operating junction temperatures range from -55°C to 175°C. Applications for this diode are found in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 190 µA @ 650 V |
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