IDW20G65C5FKSA1
DIODE SIL CARB 650V 20A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ diode, part number IDW20G65C5FKSA1, is a 650V Silicon Carbide (SiC) Schottky device packaged in a PG-TO247-3-1 through-hole configuration. This component offers a nominal forward current of 20A with a maximum forward voltage drop of 1.7V at 20A. The device exhibits a reverse leakage current of 700 µA at its maximum reverse voltage of 650V and features a capacitance of 590pF measured at 1V and 1MHz. Notably, the IDW20G65C5FKSA1 demonstrates zero reverse recovery time for currents exceeding 500mA, contributing to enhanced efficiency. Operating across a junction temperature range of -55°C to 175°C, this SiC diode is suitable for applications within power conversion, electric vehicle charging, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 590pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | PG-TO247-3-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 700 µA @ 650 V |
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