IDW16G65C5FKSA1
DIODE SIL CARB 650V 16A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDW16G65C5FKSA1 is a 650V, 16A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. Featuring a TO-247-3 package and through-hole mounting, this device offers a maximum forward voltage (Vf) of 1.7V at 16A and exhibits a reverse leakage current of 600 µA at 650V. Its key characteristic is zero reverse recovery time for currents greater than 500mA (Io), enabling enhanced switching performance and reduced switching losses. The component operates within a junction temperature range of -55°C to 175°C and has a capacitance of 470pF at 1V and 1MHz. This SiC diode is suitable for use in demanding power supplies, electric vehicle charging infrastructure, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | PG-TO247-3-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 600 µA @ 650 V |
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