IDW15S120FKSA1
DIODE SIL CARB 1.2KV 15A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
The Infineon Technologies CoolSiC™+ IDW15S120FKSA1 is a 1200 V, 15 A Silicon Carbide Schottky diode. This component, housed in a PG-TO247-3 package, offers exceptional performance characteristics. It features a forward voltage (Vf) of 1.8 V at 15 A and a reverse leakage current of 305 µA at its maximum reverse voltage of 1200 V. The diode exhibits a capacitance of 870 pF at 1 V and 1 MHz, and a significantly reduced junction operating temperature range of -55°C to 175°C. Notably, this device boasts no reverse recovery time (trr) for currents exceeding 500 mA, a key advantage of its Silicon Carbide technology. Applications for this diode include power factor correction, inverter stages, and motor drives across industries such as industrial automation and renewable energy. It is supplied in tube packaging.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 870pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | PG-TO247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 15 A |
| Current - Reverse Leakage @ Vr | 305 µA @ 1200 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
