IDW12G65C5FKSA1
DIODE SIL CARB 650V 12A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Schottky Diode, part number IDW12G65C5FKSA1, is a 650V, 12A silicon carbide device in a PG-TO247-3-41 package. This through-hole component features a maximum forward voltage (Vf) of 1.7V at 12A and a reverse leakage current of 500µA at 650V. Its capacitance is rated at 360pF at 1V and 1MHz. The diode exhibits no reverse recovery time for currents greater than 500mA, facilitating high switching frequencies. Operating junction temperatures range from -55°C to 175°C. This component is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
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