IDW10S120FKSA1
DIODE SIL CARB 1.2KV 10A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ diode, part number IDW10S120FKSA1, is a 1200V Silicon Carbide Schottky diode with a 10A average rectified current (Io). This through-hole component, packaged in a PG-TO247-3-41, features a maximum forward voltage (Vf) of 1.8V at 10A and a low reverse leakage current of 240 µA at 1200V. The diode exhibits zero reverse recovery time for currents above 500mA (Io), indicative of its SiC Schottky technology. Operating junction temperatures range from -55°C to 175°C. Notable capacitance is 580pF at 1V and 1MHz. This component is commonly utilized in power factor correction, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 580pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 1200 V |
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