IDW10G65C5FKSA1
DIODE SIL CARB 650V 10A TO247-3Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDW10G65C5FKSA1 is a 650V, 10A Silicon Carbide Schottky diode. This component features a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 400 µA at 650V. With a junction operating temperature range of -55°C to 175°C, it exhibits no significant reverse recovery time (>500mA Io), indicating high-speed switching capabilities. The diode has a capacitance of 300pF at 1V and 1MHz. Packaged in a PG-TO247-3-41 through-hole configuration, this device is suitable for applications in power factor correction, solar inverters, industrial power supplies, and electric vehicle charging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 650 V |
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