IDV06S60CXKSA1
DIODE SIL CARB 600V 6A TO220FPManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ series IDV06S60CXKSA1 is a 600V, 6A Silicon Carbide Schottky diode. This through-hole component, housed in a PG-TO220-2 Full Pack package, offers superior performance characteristics for demanding applications. Featuring a low forward voltage of 1.7V at 6A and virtually zero reverse recovery time (trr), this diode is engineered for high efficiency and reduced switching losses. Its robust construction supports an operating junction temperature range of -55°C to 175°C. The device exhibits a reverse leakage current of 80 µA at 600V and a capacitance of 280pF at 1V and 1MHz. This technology is widely utilized in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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