IDV05S60CXKSA1
DIODE SIL CARB 600V 5A TO220FPManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDV05S60CXKSA1 is a 600V, 5A Silicon Carbide Schottky diode in a PG-TO220-2 Full Pack package. This device features a low forward voltage drop of 1.7V at 5A and negligible reverse recovery time, enabling highly efficient power conversion. The zero reverse recovery characteristic is critical for applications requiring reduced switching losses and improved thermal performance. With a junction operating temperature range of -55°C to 175°C and a reverse leakage current of only 70 µA at 600V, it offers robust performance in demanding environments. This through-hole mounted diode is suitable for power factor correction, inverter stages, and power supply designs across industrial, automotive, and renewable energy sectors.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 240pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 70 µA @ 600 V |
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