IDV03S60CXKSA1
DIODE SIL CARB 600V 3A TO220-2FPManufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDV03S60CXKSA1 is a 600V, 3A Silicon Carbide Schottky diode. This through-hole component features a TO-220-2 Full Pack package. It boasts a low forward voltage of 1.9V at 3A and a reverse leakage current of just 30 µA at 600V. The device exhibits no reverse recovery time above 500mA, a key characteristic of SiC Schottky technology, enabling faster switching speeds and reduced power losses. With an operating junction temperature range of -55°C to 175°C, it is suitable for demanding applications in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 90pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 3 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 600 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
