IDV02S60CXKSA1
DIODE SIL CARB 600V 2A TO220-2FPManufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ series IDV02S60CXKSA1 is a 600V, 2A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a PG-TO220-2 Full Pack package, features a maximum forward voltage (Vf) of 1.9V at 2A and a reverse leakage current of 15 µA at 600V. With a junction operating temperature range of -55°C to 175°C, it exhibits zero reverse recovery time (trr) for currents exceeding 500mA (Io). The device demonstrates a typical capacitance of 60pF at 1V and 1MHz. This diode is commonly deployed in power factor correction (PFC) circuits and switch-mode power supplies within the automotive and industrial sectors.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 60pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-TO220-2 Full Pack |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 2 A |
| Current - Reverse Leakage @ Vr | 15 µA @ 600 V |
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