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IDP30E60XKSA1

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IDP30E60XKSA1

DIODE GEN PURP 600V 52.3A TO220

Manufacturer: Infineon Technologies

Categories: Single Diodes

Quality Control: Learn More

Infineon Technologies IDP30E60XKSA1 is a general-purpose diode with a maximum DC reverse voltage of 600 V. This device features a high average rectified current capability of 52.3 A and a forward voltage drop of 2 V at 30 A. The diode exhibits a reverse leakage current of 50 µA at 600 V. Designed for fast recovery, its typical reverse recovery time (trr) is 126 ns. The component is housed in a PG-TO220-2-2 package, suitable for through-hole mounting. Operating junction temperatures range from -55°C to 175°C. This diode is commonly employed in power supply, motor control, and industrial automation applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)126 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)52.3A
Supplier Device PackagePG-TO220-2-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If2 V @ 30 A
Current - Reverse Leakage @ Vr50 µA @ 600 V

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