Home

Products

Discrete Semiconductor Products

Diodes

Rectifiers

Single Diodes

IDP09E120

Banner
productimage

IDP09E120

DIODE GEN PURP 1.2KV 23A TO220-2

Manufacturer: Infineon Technologies

Categories: Single Diodes

Quality Control: Learn More

Infineon Technologies IDP09E120 is a general-purpose diode with a maximum DC reverse voltage of 1200 V and an average rectified current capacity of 23 A. This component features a fast recovery time of 140 ns, falling within the <500 ns, >200 mA (Io) speed classification. The forward voltage (Vf) is a maximum of 2.15 V at 9 A, with a reverse leakage current of 100 µA at 1200 V. Housed in a PG-TO220-2-2 package, the IDP09E120 is designed for through-hole mounting and operates across a junction temperature range of -55°C to 150°C. This diode is commonly utilized in power supply applications, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)140 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)23A
Supplier Device PackagePG-TO220-2-2
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If2.15 V @ 9 A
Current - Reverse Leakage @ Vr100 µA @ 1200 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IDDD04G65C6XTMA1

DIODE SIL CARB 650V 13A HDSOP-10

product image
BAS16E6393HTSA1

DIODE GEN PURP 80V 250MA SOT23

product image
IDH10SG60CXKSA2

DIODE SIL CARB 600V 10A TO220-1