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IDP04E120

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IDP04E120

DIODE GEN PURP 1.2KV 11.2A TO220

Manufacturer: Infineon Technologies

Categories: Single Diodes

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Infineon Technologies' IDP04E120 is a general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage of 1200 V and an average rectified current handling capability of 11.2 A. Its forward voltage drop is specified at a maximum of 2.15 V at 4 A. The diode exhibits a reverse leakage current of 100 µA at its maximum reverse voltage. With a fast recovery time of 115 ns, it is suitable for applications requiring efficient switching. The device operates across a junction temperature range of -55°C to 150°C and is housed in a standard PG-TO220-2-2 package, facilitating through-hole mounting. This diode is commonly employed in power supply units, industrial motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)115 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)11.2A
Supplier Device PackagePG-TO220-2-2
Operating Temperature - Junction-55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If2.15 V @ 4 A
Current - Reverse Leakage @ Vr100 µA @ 1200 V

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