IDL08G65C5XUMA1
DIODE SIL CARBIDE 650V 8A VSON-4Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDL08G65C5XUMA1 is a 650V Silicon Carbide Schottky diode. This surface mount component, housed in a PG-VSON-4 package, offers an average rectified forward current (Io) of 8A. Its forward voltage (Vf) is a maximum of 1.7V at 8A, with a low reverse leakage current of 140 µA at its maximum reverse voltage of 650V. Notably, this diode exhibits zero reverse recovery time for currents exceeding 500mA, a characteristic of its advanced SiC technology. The device operates across a junction temperature range of -55°C to 150°C and has a capacitance of 250pF at 1V and 1MHz. This component is utilized in power conversion applications across industries such as industrial power supplies, electric vehicle charging infrastructure, and renewable energy systems. The IDL08G65C5XUMA1 is supplied in Tape & Reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 140 µA @ 650 V |
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