IDL04G65C5XUMA1
DIODE SIL CARBIDE 650V 4A VSON-4Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDL04G65C5XUMA1 is a 650V, 4A Silicon Carbide Schottky diode in a PG-VSON-4 package. This surface mount device features an exceptionally low reverse leakage current of 70 µA at 650 V and a forward voltage of 1.7 V at 4 A. With a junction operating temperature range of -55°C to 175°C, it exhibits no recovery time above 500mA. The diode has a capacitance of 130pF at 1V and 1MHz. This component is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 70 µA @ 650 V |
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