IDL02G65C5XUMA2
DIODE SIL CARBIDE 650V 2A VSON-4Manufacturer: Infineon Technologies
Categories: Single Diodes
Quality Control: Learn More
Infineon Technologies CoolSiC™+ IDL02G65C5XUMA2 is a 650V, 2A Silicon Carbide Schottky diode in a PG-VSON-4 package. This surface mount device exhibits a forward voltage (Vf) of 1.7V at 2A and a reverse leakage current (Ir) of 35µA at 650V. Notably, it features zero reverse recovery time for currents greater than 500mA (Io). The diode has a junction operating temperature range of -55°C to 175°C and a capacitance of 70pF at 1V and 1MHz. This component is commonly utilized in power factor correction (PFC) circuits and high-frequency power conversion applications across industrial, automotive, and renewable energy sectors. The device is supplied on tape and reel.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-VSON-4 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Current - Reverse Leakage @ Vr | 35 µA @ 650 V |
Request a Quote
Clients Also Buy
IDH04G65C5XKSA2
DIODE SIL CARB 650V 4A TO220-2-1
IDM05G120C5XTMA1
DIODE SIL CARB 1.2KV 5A TO252-2
IDH20G65C5XKSA2
DIODE SIL CARB 650V 20A TO220-1
