IDK12G65C5XTMA1
DIODE SIL CARB 650V 12A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK12G65C5XTMA1 is a 650 V, 12 A Silicon Carbide Schottky diode in a TO-263-2 package. This surface mount component offers a forward voltage (Vf) of 1.8 V at 12 A and a reverse leakage current of 2.1 mA at 650 V. The device exhibits no significant reverse recovery time, enabling high switching frequencies. Key specifications include a junction operating temperature range of -55°C to 175°C and a capacitance of 360 pF at 1V measured at 1MHz. This diode is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies. It is supplied in Tape & Reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
| Current - Reverse Leakage @ Vr | 2.1 mA @ 650 V |
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