IDK10G65C5XTMA2
DIODE SIL CARB 650V 10A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK10G65C5XTMA2 is a 650V, 10A Silicon Carbide Schottky diode in a PG-TO263-2 package. This surface mount component features a low forward voltage of 1.8V at 10A and zero reverse recovery time, enabling high-efficiency operation. With a junction operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The capacitance at 1V is 300pF. This diode is commonly utilized in power factor correction, inverter stages, and EV charging solutions.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
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