IDK10G65C5XTMA1
DIODE SIL CARB 650V 10A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK10G65C5XTMA1 is a 650V, 10A Silicon Carbide Schottky diode. This surface mount device features a TO-263-3, D2PAK (2 Leads + Tab) package, specifically the PG-TO263-2 variant. With a forward voltage (Vf) of 1.8V at 10A and a reverse leakage current of 1.7mA at 650V, it offers excellent performance characteristics. The device exhibits no recovery time for currents greater than 500mA. Its capacitance is rated at 300pF at 1V and 1MHz. Operating within a junction temperature range of -55°C to 175°C, this diode is suitable for demanding applications in power factor correction, solar inverters, and electric vehicle charging. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 1.7 mA @ 650 V |
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