IDK09G65C5XTMA2
DIODE SIL CARB 650V 9A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ diode, part number IDK09G65C5XTMA2, is a 650V Silicon Carbide Schottky diode. This component features a maximum forward voltage (Vf) of 1.8V at 9A and a reverse leakage current of 1.6mA at 650V. It exhibits no recovery time for currents greater than 500mA (Io), with a typical capacitance of 270pF at 1V and 1MHz. The diode operates within a junction temperature range of -55°C to 175°C and is housed in a PG-TO263-2 surface mount package. This device is suitable for applications in power factor correction, solar inverters, and electric vehicle charging. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 270pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1.6 mA @ 650 V |
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