IDK09G65C5XTMA1
DIODE SIL CARB 650V 9A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ series diode, part number IDK09G65C5XTMA1. This Silicon Carbide (SiC) Schottky diode offers a 650 V blocking voltage and a 9 A average rectified current (Io). Featuring a 1.8 V maximum forward voltage (Vf) at 9 A, it exhibits virtually no reverse recovery time above 500 mA (Io). The device boasts a low capacitance of 270 pF at 1 V and 1 MHz. Designed for surface mounting, it is supplied in the PG-TO263-2 package, also known as TO-263-3, D2PAK. The operating junction temperature range is -55°C to 175°C, with a reverse leakage of 1.6 mA at 650 V. This component is suitable for applications in power factor correction (PFC) and inverter stages within the automotive and industrial sectors.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 270pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1.6 mA @ 650 V |
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