IDK08G65C5XTMA1
DIODE SIL CARB 650V 8A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK08G65C5XTMA1 is a 650V Silicon Carbide Schottky diode. This surface mount component, housed in a PG-TO263-2 package, offers an average rectified current of 8A. Key specifications include a forward voltage (Vf) of 1.8V at 8A and a reverse leakage current of 1.4 mA at 650V. Notable for its SiC technology, it exhibits zero reverse recovery time for currents exceeding 500mA. The junction operating temperature range is -55°C to 175°C. This diode is commonly utilized in industrial power supplies, electric vehicle charging, and renewable energy systems. The product is supplied in Tape & Reel packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 1.4 mA @ 650 V |
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