IDK06G65C5XTMA1
DIODE SIL CARB 650V 6A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ DIODE SIL CARB 650V 6A TO263-2, part number IDK06G65C5XTMA1, is a SiC Schottky diode designed for demanding power applications. This surface mount component, housed in a PG-TO263-2 package (TO-263-3, D2PAK), offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 6 A. Key performance characteristics include a forward voltage (Vf) of 1.8 V at 6 A and a minimal reverse leakage current of 1.1 mA at 650 V. Notably, this diode exhibits a reverse recovery time of 0 ns, with no recovery time exceeding 500mA (Io), contributing to high switching efficiency. Its operating junction temperature range is -55°C to 175°C. The component is supplied in Tape & Reel (TR) packaging. This diode's performance profile makes it suitable for use in industries such as industrial power supplies, electric vehicle charging, and solar inverters where high efficiency and reliability are paramount.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A |
| Current - Reverse Leakage @ Vr | 1.1 mA @ 650 V |
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