IDK05G65C5XTMA2
DIODE SIL CARB 650V 5A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK05G65C5XTMA2 is a Silicon Carbide Schottky diode engineered for high-performance applications. This component features a 650 V reverse voltage rating and a 5 A average rectified forward current capacity. With a forward voltage drop of 1.8 V at 5 A, it offers excellent efficiency characteristics. The diode exhibits a minimal reverse leakage current of 830 µA at 650 V and is specified with a zero reverse recovery time, indicating superior switching performance. Its junction operating temperature range is -55°C to 175°C. The component is housed in a PG-TO263-2 package, suitable for surface mounting. Applications for this advanced diode include power factor correction, inverter stages, and general-purpose high-voltage rectification in sectors such as industrial power supplies and electric vehicle charging. The device is supplied in tape and reel packaging for automated assembly processes.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 160pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 830 µA @ 650 V |
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