IDK05G65C5XTMA1
DIODE SIL CARB 650V 5A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Series SiC Schottky Diode, part number IDK05G65C5XTMA1, offers a 650V reverse voltage rating and a 5A average rectified current (Io). This surface mount component, packaged in a PG-TO263-2 (TO-263AB), features a low forward voltage (Vf) of 1.8V at 5A and a minimal reverse leakage of 830 µA at 650V. Its Silicon Carbide technology provides exceptional performance characteristics, including zero reverse recovery time for currents exceeding 500mA. The diode operates across a junction temperature range of -55°C to 175°C and has a capacitance of 160pF at 1V. This component is ideal for applications in power electronics, including electric vehicle charging, industrial power supplies, and solar inverters. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 160pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 830 µA @ 650 V |
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