IDK04G65C5XTMA1
DIODE SIL CARB 650V 4A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Diode, part number IDK04G65C5XTMA1, is a 650V Silicon Carbide Schottky diode with a 4A average rectified current (Io). This surface mount component, housed in a PG-TO263-2 (TO-263AB) package, offers a low forward voltage (Vf) of 1.8V at 4A. Featuring zero reverse recovery time above 500mA (Io), it is ideal for applications demanding high efficiency and switching speed. The capacitance at 1V is 130pF. This diode operates across a junction temperature range of -55°C to 175°C and exhibits a reverse leakage current of 670 µA at 650V. It is supplied in Tape & Reel packaging. Applications include power factor correction, inverter circuits, and charging solutions in the automotive and industrial sectors.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 4 A |
| Current - Reverse Leakage @ Vr | 670 µA @ 650 V |
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