IDK03G65C5XTMA2
DIODE SIL CARB 650V 3A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ series SiC Schottky diode, part number IDK03G65C5XTMA2. This 650V, 3A surface mount diode features a low forward voltage of 1.8V at 3A and a reverse leakage of 500 µA at 650V. Its Silicon Carbide technology provides zero reverse recovery time for currents exceeding 500mA. The component is housed in a TO-263-3, D2PAK package and supplied on a Tape & Reel (TR). Operating junction temperature range is -55°C to 175°C. This device is suitable for applications in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 100pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
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