IDK03G65C5XTMA1
DIODE SIL CARB 650V 3A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Schottky Diode, part number IDK03G65C5XTMA1, is a 650V, 3A silicon carbide Schottky diode. This component features a low forward voltage of 1.8V at 3A and a reverse leakage current of 500 µA at 650V. The diode offers an exceptionally fast switching speed with no recovery time above 500mA. Its capacitance at 1V and 1MHz is 100pF. The IDK03G65C5XTMA1 is housed in a PG-TO263-2 package, suitable for surface mount applications. Operating temperature ranges from -55°C to 175°C. This device is commonly utilized in power factor correction, solar inverters, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 100pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
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