IDK02G65C5XTMA2
DIODE SIL CARB 650V 2A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ IDK02G65C5XTMA2 is a 650V, 2A Silicon Carbide Schottky diode in a PG-TO263-2 package. This surface mount component offers a forward voltage (Vf) of 1.8V at 2A, a reverse leakage current of 330 µA at 650V, and a junction operating temperature range of -55°C to 175°C. Notably, it features zero reverse recovery time for currents exceeding 500mA. The diode exhibits a capacitance of 70pF at 1V and 1MHz. This device finds application in power factor correction, inverter stages, and automotive power systems. Packaging is provided on tape and reel.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 330 µA @ 650 V |
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