IDK02G65C5XTMA1
DIODE SIL CARB 650V 2A TO263-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDK02G65C5XTMA1 is a 650V, 2A Silicon Carbide Schottky diode in a TO-263-3 package. This surface mount component features a low forward voltage of 1.8V at 2A and a reverse leakage current of 330µA at 650V. The diode exhibits zero reverse recovery time, crucial for high-frequency switching applications. With a junction operating temperature range of -55°C to 175°C, it is suitable for demanding environments. The device is supplied in Tape & Reel packaging. This CoolSiC™+ diode is utilized in power factor correction, switch-mode power supplies, and industrial motor drives.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 70pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Current - Reverse Leakage @ Vr | 330 µA @ 650 V |
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