IDH20G65C5XKSA1
DIODE SIL CARB 650V 20A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH20G65C5XKSA1 is a 650V, 20A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a PG-TO220-2-2, features a maximum forward voltage (Vf) of 1.7V at 20A and a reverse leakage current of 700 µA at 650V. With a junction operating temperature range of -55°C to 175°C, it exhibits no reverse recovery time for currents above 500mA (Io). The diode's capacitance at 1V and 1MHz is 590pF. This device is suitable for applications in power factor correction, solar inverters, and electric vehicle charging.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 590pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 700 µA @ 650 V |
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