IDH16G65C5XKSA1
DIODE SIL CARB 650V 16A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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The Infineon Technologies CoolSiC™+ IDH16G65C5XKSA1 is a 650V Silicon Carbide Schottky diode. This through-hole component features an average rectified current capability of 16A and a maximum forward voltage of 1.7V at 16A. Designed for demanding applications, it exhibits a reverse leakage current of 550 µA at 650V. The device boasts a zero reverse recovery time for currents exceeding 500mA (Io), characteristic of its advanced SiC technology. Packaged in a PG-TO220-2-2 configuration, it operates across a junction temperature range of -55°C to 175°C. The capacitance at 1V and 1MHz is rated at 470pF. This diode is suitable for power electronics applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 470pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 550 µA @ 650 V |
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