IDH12SG60CXKSA1
DIODE SIL CARB 600V 12A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ diode, part number IDH12SG60CXKSA1, is a 600V, 12A Silicon Carbide Schottky device. This through-hole component, housed in a TO-220-2 package, offers a forward voltage of 2.1V at 12A and a reverse leakage of 100 µA at 600V. Notably, it features zero reverse recovery time for currents exceeding 500mA. The junction operating temperature range is -55°C to 175°C. With a capacitance of 310pF at 1V and 1MHz, this diode is suitable for demanding applications in power electronics, including electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 12 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
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