IDH12S60CAKSA1
DIODE SIL CARB 600V 12A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ Series IDH12S60CAKSA1 is a 600V, 12A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a PG-TO220-2-2 package, offers a forward voltage (Vf) of 1.7V at 12A and a reverse leakage current of 160 µA at 600V. Notably, it exhibits a zero reverse recovery time (trr) for currents greater than 500mA (Io), indicating minimal switching losses. The diode features a junction operating temperature range of -55°C to 175°C and a capacitance of 530pF at 1V and 1MHz. Its SiC technology makes it suitable for applications in power factor correction, electric vehicle charging, industrial power supplies, and renewable energy systems where high efficiency and performance are critical.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 530pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 160 µA @ 600 V |
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