IDH12G65C5XKSA1
DIODE SIL CARB 650V 12A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH12G65C5XKSA1 is a 650V Silicon Carbide Schottky diode designed for demanding power applications. This device features an average rectified forward current (Io) of 12A and a maximum forward voltage (Vf) of 1.7V at this current. Its reverse leakage current at 650V is a minimal 190 µA, contributing to high efficiency. The diode exhibits zero reverse recovery time, a key characteristic of SiC Schottky technology, ensuring faster switching speeds and reduced switching losses. With a junction operating temperature range of -55°C to 175°C, it is suitable for high-temperature environments. The component is supplied in a PG-TO220-2 package, facilitating through-hole mounting. Applications include power factor correction, switch-mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 360pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 190 µA @ 650 V |
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