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IDH10S60CAKSA1

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IDH10S60CAKSA1

DIODE SIL CARB 600V 10A TO220-2

Manufacturer: Infineon Technologies

Categories: Single Diodes

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Infineon Technologies CoolSiC™+ IDH10S60CAKSA1 is a 600V Silicon Carbide Schottky diode. This through-hole component, housed in a PG-TO220-2-2 package, offers a 10A average rectified current (Io) capability with a maximum forward voltage (Vf) of 1.7V at 10A. It exhibits a low reverse leakage current of 140 µA at 600V and features zero reverse recovery time (trr) for currents greater than 500mA. The diode operates across a junction temperature range of -55°C to 175°C and has a capacitance of 480pF at 1V and 1MHz. This component is suitable for applications in power electronics, including industrial power supplies and motor drives.

Additional Information

Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-2
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Capacitance @ Vr, F480pF @ 1V, 1MHz
Current - Average Rectified (Io)10A
Supplier Device PackagePG-TO220-2-2
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 10 A
Current - Reverse Leakage @ Vr140 µA @ 600 V

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