IDH10S120AKSA1
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ series diode, part number IDH10S120AKSA1, is a 1200V, 10A Silicon Carbide Schottky diode. This robust component features a low forward voltage of 1.8V at 10A and a reverse leakage current of 240µA at 1200V. The device exhibits zero reverse recovery time, ensuring high efficiency in switching applications. With a junction operating temperature range of -55°C to 175°C and packaged in a PG-TO220-2-2 through-hole configuration, this diode is suitable for demanding power electronics applications across industries such as electric vehicles, industrial power supplies, and solar inverters. The capacitance @ Vr, F is 500pF at 1V and 1MHz.
Additional Information
Series: CoolSiC™+RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 240 µA @ 1200 V |
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