IDH10G65C5ZXKSA1
DIODE SIL CARB 650V 10A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies IDH10G65C5ZXKSA1 is a 650V, 10A Silicon Carbide (SiC) Schottky diode, part of the CoolSiC™+ series. This through-hole component in a PG-TO220-2 package offers a forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 180 µA at 650V. It features a junction operating temperature range of -55°C to 175°C and exhibits no reverse recovery time above 500mA. With a typical capacitance of 300pF at 1V and 1MHz, this diode is suitable for power factor correction, inverter, and power supply applications across industrial, automotive, and renewable energy sectors.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
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