IDH10G65C5XKSA1
DIODE SIL CARB 650V 10A TO220-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH10G65C5XKSA1 is a 650V, 10A Silicon Carbide Schottky diode. This through-hole component features a low forward voltage of 1.7V at 10A and a reverse leakage current of 340 µA at 650V. The device exhibits zero reverse recovery time (trr) for currents above 500mA (Io). Its junction operating temperature range is -55°C to 175°C. The diode is housed in a TO-220-2 package, specifically the PG-TO220-2-2 variant, and is supplied in tubes. This technology is widely adopted in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 340 µA @ 650 V |
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