IDH09SG60CXKSA2
DIODE SIL CARB 600V 9A TO220-2-1Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies CoolSiC™+ IDH09SG60CXKSA2 is a 600V, 9A Silicon Carbide Schottky diode. This through-hole component, packaged in a PG-TO220-2-1, offers a maximum forward voltage (Vf) of 2.1V at 9A. Engineered with SiC technology, it exhibits zero reverse recovery time above 500mA (Io). Key specifications include a reverse leakage current of 80 µA at 600V and a capacitance of 280pF at 1V and 1MHz. The operating junction temperature range is -55°C to 175°C. This device is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 9 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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