IDH09SG60CXKSA1
DIODE SIL CARB 600V 9A TO220-2-2Manufacturer: Infineon Technologies
Categories: Single Diodes
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Infineon Technologies' CoolSiC™+ series IDH09SG60CXKSA1 is a 600V, 9A Silicon Carbide Schottky diode packaged in a TO-220-2 (PG-TO220-2-2) through-hole configuration. This diode exhibits a forward voltage (Vf) of 2.1V at 9A and a low reverse leakage current of 80 µA at 600V. Its key characteristic is a zero reverse recovery time (trr) for currents exceeding 500mA, enabling high-frequency switching and reduced switching losses. The device operates across a junction temperature range of -55°C to 175°C and has a typical capacitance of 280pF at 1V and 1MHz. This component is suitable for demanding applications in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: CoolSiC™+RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 280pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 9A |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 9 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 600 V |
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